News Release

Sumitomo Electric Device Innovations Offers Suite of Devices for SATCOM applications at IMS2016

May 16, 2016
Sumitomo Electric Device Innovations, Inc.

IMS San Francisco, CA – May 24, 2016 - Sumitomo Electric Device Innovations, Inc. a leading provider of advanced RF, wireless and optical communications solutions will feature its 25W Ku-band Very Small Aperture Terminal (VSAT) MMIC among a line of gallium nitride (GaN) offerings at IMS 2016 in San Francisco.

GaN technology allows significantly higher output powers. Tuned for operation from 13.75-14.5 GHz, the 25W GaN MMIC power amplifier (PA) enables the SATCOM industry to the ability to achieve higher-power, more efficient Ku-band solutions than the incumbent GaAs solutions.

Among its new devices, the F445 Ku-band device is available in our V1H compact flanged package. The 50Ω Ku-band MMIC operates at a VDD of 24V and delivers measured performance of 24dB linear gain at 44dBm output power and 44dBm output power at 5dB gain compression.

Key Features:

  • Frequency range : 13.75 – 14.5 GHz
  • Output power : 25W (Typ.)
  • Small signal gain : 24dB (Typ.)
  • Hermetically Sealed Package

Sumitomo Electric Device Innovations, Inc. continues to deliver cutting edge products. “Our expertise in GaN technology offers new possibilities for SATCOM applications. The new GaN PA provides the ability to simplify the design by reducing the number of required transistors,” says Takahisa Kawai, Head of Electron Device Development Dept., Sumitomo Electric Device Innovations, Inc. “For example, the F445 can replace 3 GaAs IMFETs and also provides higher efficiency.”

Visit Sumitomo Electric Device Innovations, Booth 1927, to learn more

* International Microwave Symposium IMS2016
More information can be found at: http://www.ims2016.org/

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