HOME > Electron Devices > GaAs HEMTs > FHX35LG

Product Information

Specifications

FHX35LG


Part Number FHX35LG
Class Low-noise HEMTs > GaAs HEMTs
Outline / Package Code LG
Function Super Low Noise HEMT
Features
Description The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 500KB)

Noise figure NF Typ. (dB) 1.2
Associated Gain Gas Typ. (dB) 10
Drain Voltage VDS (V) 3
Drain Current lDS (mA) 10
Frequency f (GHz) 12
Application Low Noise Amp, Mixer, GPS
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required

Package Information

LG Package
LG
LG

Return to the top