Part Number | FHX35LG |
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Class | Low-noise HEMTs > GaAs HEMTs |
Outline / Package Code | LG |
Function | Super Low Noise HEMT |
Features |
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Description | The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance. |
Datasheet | ( 534KB) |
Noise figure NF Typ. (dB) | 1.2 |
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Associated Gain Gas Typ. (dB) | 10 |
Drain Voltage VDS (V) | 3 |
Drain Current lDS (mA) | 10 |
Frequency f (GHz) | 12 |
Application | Low Noise Amp, Mixer, GPS |
Note | Tc(op)=+25°C |
Simulation | |
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S-Parameter | *Login required |