Product Information
Specifications
FHX04X
| Part Number | FHX04X |
|---|---|
| Class | Low-noise HEMTs > GaAs HEMTs |
| Function | GaAs FET & HEMT Die |
| Features |
|
| Description | The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance. |
| Datasheet | (  384KB) |
| Noise figure NF Typ. (dB) | 0.75 |
|---|---|
| Associated Gain Gas Typ. (dB) | 10.5 |
| Drain Voltage VDS (V) | 2 |
| Drain Current lDS (mA) | 10 |
| Frequency f (GHz) | 12 |
| Application | Low Noise Amp |
| Note | Tc(op)=+25°C Conventional Chip |
Further Information
| Simulation | |
|---|---|
| S-Parameter | *Login required |
| Documents | |
| ApplicationNote |
Quality Assurance for Bare-Die of wireless device ( 518KB)
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