Part Number | FHX04X |
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Class | Low-noise HEMTs > GaAs HEMTs |
Function | GaAs FET & HEMT Die |
Features |
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Description | The FHX04X, FHX05X, FHX06X are High Electron MobilityTransistors (HEMT) intended for general purpose, low noise and highgain amplifiers in the 2-18GHz frequency range. The devices are wellsuited for telecommunication, DBS, TVRO, VSAT or other low noiseapplications.Sumitomo Electric's stringent Quality Assurance Program assures the highestreliability and consistent performance. |
Datasheet | ( ![]() |
Noise figure NF Typ. (dB) | 0.75 |
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Associated Gain Gas Typ. (dB) | 10.5 |
Drain Voltage VDS (V) | 2 |
Drain Current lDS (mA) | 10 |
Frequency f (GHz) | 12 |
Application | Low Noise Amp |
Note | Tc(op)=+25°CConventional Chip |
Simulation | |
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S-Parameter | *Login required |
Documents | |
ApplicationNote |
Quality Assurance for Bare-Die of wireless device ( ![]() |