HOME > Electron Devices > Internally Matched High Power GaAs FETs > FLM5972-8F

Product Information

Specifications

FLM5972-8F


Part Number FLM5972-8F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function C-Band Internally Matched FET
Features
  • High Output Power: P1dB = 39.0dBm (Typ.)
  • High Gain: G1dB = 8.5dB (Typ.)
  • High PAE: hadd = 31% (Typ.)
  • Low IM3 = -45dBc@Po = 28.0dBm
  • Broad Band: 5.9 to 7.2GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The FLM5972-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 394KB)

Frequency f (GHz) 5.9-7.2
2tone test lM3 Typ. (dBc) -45
2tone test @Pout S.C.L. (dBm) 28
P1dB Typ. (dBm) 39
G1db.Typ (dB) 8.5
η add Typ.(%) 31
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 2200
IDS (RF) Typ. (mA) 2200
Rth Typ.(°C/W) 3
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package
IB
IB

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