HOME > Electron Devices > Internally Matched High Power GaAs FETs > FLM7179-4F

Product Information

Specifications

FLM7179-4F


Part Number FLM7179-4F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function C-Band Internally Matched FET
Features
  • High Output Power: P1dB = 36.5dBm (Typ.)
  • High Gain: G1dB = 9.0dB (Typ.)
  • High PAE: hadd = 35% (Typ.)
  • Low IM3 = -46dBc@Po = 25.5dBm
  • Broad Band: 7.1 to 7.9GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The FLM7179-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 389KB)

Frequency f (GHz) 7.1-7.9
2tone test lM3 Typ. (dBc) -46
2tone test @Pout S.C.L. (dBm) 25.5
P1dB Typ. (dBm) 36.5
G1db.Typ (dB) 9
η add Typ.(%) 35
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 1100
IDS (RF) Typ. (mA) 1100
Rth Typ.(°C/W) 5
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package
IB
IB

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