HOME > Electron Devices > Internally Matched High Power GaAs FETs > FLM1414-12F

Product Information

Specifications

FLM1414-12F


Part Number FLM1414-12F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function Ku-Band Internally Matched FET
Features
  • High Output Power: P1dB = 40.5dBm (Typ.)
  • High Gain: G1dB = 5.0dB (Typ.)
  • High PAE: ηadd = 23% (Typ.)
  • Broad Band: 14.0 to 14.5GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed
Description The FLM1414-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 259KB)

Frequency f (GHz) 14.0-14.5
P1dB Typ. (dBm) 41
G1db.Typ (dB) 6
η add Typ.(%) 23
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 3600
IDS (RF) Typ. (mA) 3600
Rth Typ.(°C/W) 1.8
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package
IB
IB

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