HOME > Electron Devices > Internally Matched High Power GaAs FETs > FLM7785-6F

Product Information



Part Number FLM7785-6F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function C-Band Internally Matched FET
Description The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 241KB)

Frequency f (GHz) 7.7-8.5
2tone test lM3 Typ. (dBc) -46
2tone test @Pout S.C.L. (dBm) 27.5
P1dB Typ. (dBm) 38.5
G1db.Typ (dB) 8.5
η add Typ.(%) 31
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 1750
IDS (RF) Typ. (mA) 1750
Rth Typ.(°C/W) 4
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Further Information
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ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package

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