HOME > Electron Devices > GaN HEMTs for Base Station > EGN35C030MK

Product Information



Part Number EGN35C030MK
Class Power GaN > GaN HEMTs for Base Station  > Driver Stage
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 3.5GHz WiMAX design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 334KB)

Frequency (GHz) 3.5
Psat Typ.(dBm) 45.0
Pout (Ave.)Typ.(dBm) 31.5
Gp Typ. (dB) 16.5
ηd @Pout(Ave.) (%) 11
VDS (V) 50
IDS(DC) (mA) 150
Rth Typ.(°C/W) 5.0
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : CW
Further Information
S-Parameter *Login required
DXF files
Test Fixture *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package

Return to the top