HOME > Electron Devices > GaN HEMTs for Base Station > EGN21C070MK

Product Information



Part Number EGN21C070MK
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code MK
Function High Voltage - High Power GaN-HEMT
Description SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.1GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 347KB)

Frequency (GHz) 2.14
Psat Typ.(dBm) 49.5
Pout (Ave.)Typ.(dBm) 41.5
Gp Typ. (dB) 17.0
ηd @Pout(Ave.) (%) 33
VDS (V) 50
IDS(DC) (mA) 300
Rth Typ.(°C/W) 2.5
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)
Further Information
S-Parameter *Login required
DXF files
Test Fixture *Login required
Load-Pull *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

MK Package

Return to the top