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製品情報

Specifications

FLX257XV


Part Number FLX257XV
Class Power GaAs > GaAs FETs (Die)

1dB Compression Power P1dB (dBm) 33.5
1dB Compression Gain G1dB (dB) 7.5
Frequency f (GHz) 10.0
Power Added Efficiency η add (%) 31
Drain Voltage VDS (V) 10
Drain Current lDS (mA) 600
Application X-band Amplifier
Note Tc(op)=+25°C Via Hole PHS (Plated Heat Shink)
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Quality Assurance for Bare-Die of wireless device
(PDF 323KB)

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