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製品情報

Specifications

FLK207XV


Part Number FLK207XV
Class Power GaAs > GaAs FETs (Die)
Function GaAs FET & HEMT Die
Features
  • High Output Power: P1dB = 32.5dBm(Typ.)
  • High Gain: G1dB = 6.0dB(Typ.)
  • High PAE: ηadd = 27%(Typ.)
  • Proven Reliability
Description The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance
Datasheet ( PDF 338KB)

1dB Compression Power P1dB (dBm) 32.5
1dB Compression Gain G1dB (dB) 6
Frequency f (GHz) 14.5
Power Added Efficiency η add (%) 27
Drain Voltage VDS (V) 10
Drain Current lDS (mA) 480
Application Ku-band Amplifier
Note Tc(op)=+25°C Via Hole PHS (Plated Heat Shink)
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Quality Assurance for Bare-Die of wireless device
(PDF 518KB)

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