|Class||Power GaN > GaN HEMTs for Base Station > Final Stage|
|Outline / Package Code||I2D|
|Function||High Voltage - High Power GaN-HEMT|
|Description||SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.6GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
|Gp Typ. (dB)||16.3|
|ηd @Pout(Ave.) (%)||30|
|Note||TC(op)=+25°CPsat : 10%-duty RF pulse(DC supply constant)Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)|