|Class||Power GaN > GaN HEMTs for Base Station > Peak Stage of Doherty Amplifier|
|Outline / Package Code||I2D|
|Function||High Voltage - High Power GaN-HEMT|
|Description||SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.1GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
|Gp Typ. (dB)||17.5|
|Note||TC(op)=+25°CPsat : 10%-duty RF pulse(DC supply constant)Gp : Pout=3dB backoff point, 10%-duty RF pulse(DC supply constant:IDS(DC)=10mA)|