Product Information
Specifications
SGN19C320I2D
| Part Number | SGN19C320I2D |
|---|---|
| Class | Power GaN > GaN HEMTs for Base Station > Peak Stage of Doherty Amplifier |
| Outline / Package Code | I2D |
| Datasheet | (  125KB) |
| Frequency (GHz) | 1.9 |
|---|---|
| Psat Typ.(dBm) | 55.0 |
| Gp Typ. (dB) | 18 |
| VDS (V) | 50 |
| Rth Typ.(°C/W) | 1.2 |
| Note | TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Gp : Pout=3dB backoff point, 10%-duty RF pulse(DC supply constant:IDS(DC)=10mA) |
Further Information
| Simulation | |
|---|---|
| S-Parameter | *Login required |
| Documents | |
| ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB)
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