ホーム > 電子デバイス > Internally Matched High Power GaAs FETs > FLM8596-15F

製品情報

Specifications

FLM8596-15F


Part Number FLM8596-15F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function X-Band Internally Matched FET
Features
  • High Output Power: P1dB=42.0dBm(Typ.)
  • High Gain: G1dB=7.5dB(Typ.)
  • High PAE: ηadd=32%(Typ.)
  • Broad Band: 8.5 to 9.6GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Datasheet ( PDF 240KB)

Frequency f (GHz) 8.5-9.6
P1dB Typ. (dBm) 42
G1db.Typ (dB) 7.5
η add Typ.(%) 32
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 3600
IDS (RF) Typ. (mA) 4000
Rth Typ.(°C/W) 2.3
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package
IB
IB

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