ホーム > 電子デバイス > Internally Matched High Power GaAs FETs > FLM0910-25F

製品情報

Specifications

FLM0910-25F


Part Number FLM0910-25F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IK
Function X-Band Internally Matched FET
Features
  • High Output Power: P1dB=44dBm(Typ.)
  • High Gain: G1dB=7.0dB(Typ.)
  • High PAE: ηadd=30%(Typ.)
  • Broad Band: 9.5 to 10.5GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Datasheet ( PDF 178KB)

Frequency f (GHz) 9.5-10.5
P1dB Typ. (dBm) 44
G1db.Typ (dB) 7
η add Typ.(%) 30
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 6500
IDS (RF) Typ. (mA) 6500
Rth Typ.(°C/W) 1.4
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IK Package
IK
IK

ページの先頭へ