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Application: Base Station

Power GaN

GaN HEMTs for Base Station (Driver and Final Stage)
Part Number Single/Twin Freq. (GHz) Specified Freq. (GHz) Psat (dBm) Pout (dBm) Gp (dB) ηd (%) VDS (V) IDS (DC) (mA) Rth
(°C/W)
Package
SG26F30S-D Single DC-2.7 2.65 46 32.5 18.5 13.5 50 150 5.5 Z2D
SG36F30S-D Single 3.3-3.7 3.6 45.5 32 17 12.5 50 150 5.5 Z2D
SGFCF10S-D Single DC-3.7 2.65 41 27.5 19.5 13.5 50 50 10 Z2D
SGFCF15S-D Single DC-3.7 2.65 42.5 29 19.5 13.5 50 75 9 Z2D
SGFCF20S-D Single DC-3.7 2.65 44 30.5 19 13.5 50 100 7 Z2D
SGFCF20T-D *4 Twin DC-3.7 2.65 41 27.5 19.5 13.5 50 50 10 Z2D
SGFCF30T-D *4 Twin DC-3.7 2.65 42.5 29 19.5 13.5 50 75 9 Z2D
SGFCF40T-D *4 Twin DC-3.7 2.65 44 30.5 19 13.5 50 100 7 Z2D
Note: Tc (op)=+25°C
GaN HEMTs for Base Station (Final Stage)
Part Numner Freq. (GHz) Psat (dBm) Pout (dBm) Gp (dB) ηd (%) VDS (V) IDS(DC) (mA) Rth (°C/W)
SGN19H181M1H 1.88 52.6 44.5 16.5 50 600 1.4 M1H
SGN19H240M1H 1.88 53.8 46.0 16.5 50 800 1.2 M1H
SGN21H121M1H 2.17 50.8 43.0 16.0 50 400 1.7 M1H
SGN21H180M1H 2.14 52.8 44.5 16.5 50 600 1.4 M1H
SGN21H181M1H 2.17 52.6 44.5 16.0 50 600 1.4 M1H
SGN26H080M1H 2.65 49.3 41.0 17.5 50 250 2.0 M1H
SGN26H120M1H 2.65 50.8 43.0 17.0 50 400 1.7 M1H
SGN26H180M1H 2.65 52.5 44.5 16.5 50 600 1.4 M1H
SGN26H241M1H 2.65 54.0 46.0 15.0 50 800 1.2 M1H
SGN36H050M1H 3.6 47.0 39.0 17.0 50 180 2.6 M1H
SGN36H080M1H 3.6 49.1 41.0 16.0 50 250 2.0 M1H
SGN36H120M1H 3.6 50.8 43.0 15.0 50 400 1.7 M1H
SGNH240M1H 0.9 54.6 46.0 17.5 50 800 1.2 M1H
Note: Tc (op)=+25°C
GaN HEMTs for Base Station (Peak Stage of Doherty Amplifier)
Part Numner Freq. (GHz) Psat (dBm) Gp (dB) VDS (V) Rth (°C/W) Package
SGNH360M1H 0.9 55.6 18.5 50 1.2 M1H
Note: Tc (op)=+25°C
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