Application: Base Station
Power GaN
GaN HEMTs for Base Station (Driver and Final Stage)
Part Number |
Single/Twin |
Freq. (GHz) |
Specified Freq. (GHz) |
Psat (dBm) |
Pout (dBm) |
Gp (dB) |
ηd (%) |
VDS (V) |
IDS (DC) (mA) |
Rth (°C/W) |
Package |
SG26F30S-D |
Single |
DC-2.7 |
2.65 |
46 |
32.5 |
18.5 |
13.5 |
50 |
150 |
5.5 |
Z2D |
SG36F30S-D |
Single |
3.3-3.7 |
3.6 |
45.5 |
32 |
17 |
12.5 |
50 |
150 |
5.5 |
Z2D |
SGFCF10S-D |
Single |
DC-3.7 |
2.65 |
41 |
27.5 |
19.5 |
13.5 |
50 |
50 |
10 |
Z2D |
SGFCF15S-D |
Single |
DC-3.7 |
2.65 |
42.5 |
29 |
19.5 |
13.5 |
50 |
75 |
9 |
Z2D |
SGFCF20S-D |
Single |
DC-3.7 |
2.65 |
44 |
30.5 |
19 |
13.5 |
50 |
100 |
7 |
Z2D |
SGFCF20T-D *4 |
Twin |
DC-3.7 |
2.65 |
41 |
27.5 |
19.5 |
13.5 |
50 |
50 |
10 |
Z2D |
SGFCF30T-D *4 |
Twin |
DC-3.7 |
2.65 |
42.5 |
29 |
19.5 |
13.5 |
50 |
75 |
9 |
Z2D |
SGFCF40T-D *4 |
Twin |
DC-3.7 |
2.65 |
44 |
30.5 |
19 |
13.5 |
50 |
100 |
7 |
Z2D |
Note: Tc (op)=+25°C
GaN HEMTs for Base Station (Final Stage)
GaN HEMTs for Base Station (Peak Stage of Doherty Amplifier)
Part Number |
Freq. (GHz) |
Psat (dBm) |
Gp (dB) |
VDS (V) |
Rth (°C/W) |
Package |
SGNH360M1H |
0.9 |
55.6 |
18.5 |
50 |
1.2 |
M1H |
Note: Tc (op)=+25°C