IMS San Francisco, CA – May 24, 2016 - Sumitomo Electric Device Innovations, Inc. a leading provider of advanced RF, wireless and optical communications solutions will introduce new devices to its line of high power GaN products for X-band radar applications at IMS 2016 in San Francisco.

GaN is a proven and reliable technology for radar applications. Today’s radars provide larger detection area and improved early detection, all while reducing size and weight. GaN provides very high power and bandwidth that improves performance. GaN is the ultimate in performance and high power density.

The F514 is a 300W IMFET. It offers high gain of GP=10dB (Typ.) and efficiency of 42%. This product adds to the existing line of 50W, 100W and 200W IMFET devices.

Key Features:

• High Output Power: Psat=55.5dBm (Typ.)
• High Gain: GP=10dB (Typ.)
• High Power Added Efficiency: 42% (Typ.)
• Frequency Band: 9.2 to 10.1GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package

The F501 is a 30W GaN-HEMT Module that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. The F501 is a compact two-stage hybrid module SMD with 25.5dB gain, 30W power, is ideal as phased array radar element or a driver for higher power devices.

Key Features:

• High Output Power: Psat=45.0dBm (Typ.)
• High Gain: 25.5dB (Typ.)
• Frequency Band: 8.5 to 9.8GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed SMT Package

Sumitomo Electric remains the leader in GaN and continues to lead in innovation and technology to help customers with lower costs and improved performance for next generation radar systems.

Visit Sumitomo Electric Device Innovations, Booth 1927, to learn more

* International Microwave Symposium IMS2016
More information can be found at: http://www.ims2016.org/