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Product Information

Performance

SGN2732-300L-R


Part Number SGN2732-300L-R
Class GaN Product > GaN HEMTs for Radar
Outline / Package Code IV
Function High Voltage - High Power GaN-HEMT for Radar
Features
  • High Power: 350W (Typ.) @ Pin=12.6W(41dBm)
  • High Efficiency: 62% (Typ.) @ Pin=12.6W(41dBm)
  • Broad Band: 2.7 to 3.2GHz
  • Impedance Matched Zin/Zout = 50 Ω
  • Hermetically Sealed Package
Description Sumitomo Electric's GaN-HEMT SGN2732-300L-R offers high power, high efficiency and greater consistency covering 2.7 to 3.2 GHz for S-band radar applications with 50V operation.
Datasheet ( PDF 318KB)

Frequency (GHz) 2.7-3.2
Pout (dBm) 55.5
Power Gain (dB) 14.5
Efficiency (%) 62
VDS (V) 50
IDS(DC) (A) 1.0
Rth (°C/W) 1.1
Condition Pulse width: 200µsec, Duty 10%
Note Tc(op)=+25°C

Package Information

IV Package
IV
IV

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