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Product Information

Performance

SGC0910-200B-R


Part Number SGC0910-200B-R
Class GaN Product > GaN HEMTs for Radar  > C/X
Outline / Package Code IK
Function C-Band Internally Matched GaN-HEMT
Features
  • High Output Power: Psat=53.5dBm (Typ.)
  • High Gain: Gp=9.5dB (Typ.)
  • High Drain Efficiency: DE=39% (Typ.)
  • Broad Band: 9.2 to 10.5GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The SGC0910-200B-R is a high power GaN-HEMT that is internally matched for C-band radar bands to provide optimum power and gain in a 50Ω system.
Datasheet ( PDF 160KB)

Frequency f (GHz) 9.2-10.5
Pout (dBm) 53.5(-10.1) 52.5(10.1-)
Gp (dB) 9.5(-10.1) 8.5(10.1-)
ηD (%) 39
VDS (V) 50
lDS(DC) (A) 0.66
Rth (°C/W) 0.6
Conditions Pulse Width: 100µsec, Duty 10%
Note Tc(op)=+25°C

Package Information

IK Package
IK
IK

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