Part Number | SG36F30S-D |
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Class | Power GaN > GaN HEMTs for Base Station > Driver and Final Stage |
PKG Code | Z2D |
Function | High Voltage - Plastic GaN-HEMT |
Features |
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Datasheet | ( 440KB) |
Description | Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are driver stage and final stage of micro cell for base transceiver station. |
Single / Twin | Single |
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Operation Freq. (GHz) | 3.3-3.7 |
Measurement Freq. (GHz) | 3.6 |
Psat Typ. (dBm) *1 | 45.5 |
Pout (Ave.) (dBm) *2 | 32 |
Gp @Pout(Ave.) Typ. (dB) *2 | 17 |
ηd @Pout(Ave.) Typ. (%) *2 | 12.5 |
VDS (V) | 50 |
IDS (DC) (mA) | 150 |
Rth Typ. (°C/W) *3 | 5.5 |
Note | *1: 10%-duty RF pulse(DC supply constant) *2: Pout=(Ave.) , W-CDMA(3GPP3.4 12-00)BS-1 64ch 85% clipping modulation(PAR=8.5dB@0.01%) *3: Sampling Test : samples size 10pcs. Criteria(accept / reject)=(0 / 1) Note: Tc (op)=+25°C |