HOME > Electron Devices > GaN HEMTs for Base Station > SG36F30S-D

Product Information



Part Number SG36F30S-D
Class Power GaN > GaN HEMTs for Base Station  > Driver and Final Stage
PKG Code Z2D
Function High Voltage - Plastic GaN-HEMT
Datasheet ( PDF 440KB)
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are driver stage and final stage of micro cell for base transceiver station.

Single / Twin Single
Operation Freq. (GHz) 3.3-3.7
Measurement Freq. (GHz) 3.6
Psat Typ. (dBm) *1 45.5
Pout (Ave.) (dBm) *2 32
Gp @Pout(Ave.) Typ. (dB) *2 17
ηd @Pout(Ave.) Typ. (%) *2 12.5
VDS (V) 50
IDS (DC) (mA) 150
Rth Typ. (°C/W) *3 5.5
Note *1: 10%-duty RF pulse(DC supply constant)
*2: Pout=(Ave.) , W-CDMA(3GPP3.4 12-00)BS-1 64ch 85% clipping modulation(PAR=8.5dB@0.01%)
*3: Sampling Test : samples size 10pcs. Criteria(accept / reject)=(0 / 1)
Note: Tc (op)=+25°C

Package Information

Z2D Package

Return to the top