Part Number | FLL200IB-3 |
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Class | Power GaAs > High Power GaAs FETs |
Outline / Package Code | IB |
Function | L-Band Medium & High Power GaAs FET |
Features |
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Description | The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance. |
Datasheet | ( 660KB) |
Frequency Band | L |
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Series | FLL |
P1dB Typ. (dBm) | 42.5 |
G1db.Typ (dB) | 11 |
η add Typ.(%) | 34 |
Fequency f (GHz) | 2.6 |
VDS Typ.(V) | 10 |
lDS(DC)Typ.(mA) | 4800 |
Rth Typ.(°C/W) | 1.6 |
Note | Tc(op)=+25°C |
Simulation | |
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S-Parameter | *Login required |
Documents | |
ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB) |