HOME > Electron Devices > GaN HEMTs for Base Station > EGN26C070I2D

Product Information



Part Number EGN26C070I2D
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code I2D
Function High Voltage - High Power GaN-HEMT
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.6GHz WiMAX design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 423KB)

Frequency (GHz) 2.6
Psat Typ.(dBm) *1 48.8
Pout (Ave.)Typ.(dBm) 40.8
Gp Typ. (dB) *2 18.0
ηd @Pout(Ave.) (%) 35
VDS (V) 50
IDS(DC) (mA) 300
Rth Typ.(°C/W) 2.5
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Pout(Ave.) : WCDMA(3GPP3.4 12-00)BS-1 64ch 85% cliping modulation(PAR=8.5dB@0.01%)
Further Information
S-Parameter *Login required
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

I2D Package

Return to the top