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Product Information

Specifications

FHX13LG


Part Number FHX13LG
Class Low-noise HEMTs > GaAs HEMTs
Outline / Package Code LG
Function Super Low Noise HEMT
Features
  • Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
  • High Associated Gain: 13.0dB (Typ.)@f=12GHz
  • Lg ≤ 0.15µm, Wg = 200µm
  • Gold Gate Metallization for High Reliability
  • Cost Effective Ceramic Microstrip (SMT) Package
  • Tape and Reel Packaging Available
    Description The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
    Datasheet ( PDF 356KB)

    Noise figure NF Typ. (dB) 0.45
    Associated Gain Gas Typ. (dB) 13
    Drain Voltage VDS (V) 2
    Drain Current lDS (mA) 10
    Frequency f (GHz) 12
    Application Low Noise Amp
    Note Tc(op)=+25°C
    Further Information
    Simulation
    S-Parameter *Login required

    Package Information

    LG Package
    LG
    LG

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