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Product Information

Performance

SGN3135-500H-R


Part Number SGN3135-500H-R
Class GaN Product > GaN HEMTs for Radar
Outline / Package Code IV
Function High Voltage - High Power GaN-HEMT for Radar
Features
  • High Power : 570W (Typ.) @ Pin=39.8W (46dBm)
  • High Efficiency: 58%(Typ.) @ Pin=39.8W (46dBm)
  • Broad Band: 3.1 to 3.5 GHz
  • Impedance Matched Zin/Zout = 50 Ω
Description Sumitomo Electric's GaN-HEMT SGN3135-500H-R offers high power, high efficiency and greater consistency covering 3.1 to 3.5 GHz for S-band radar applications with 50V operation and pulse condition of up to 200µsec pulse width and duty of up to 10%.
Datasheet ( PDF 519KB)

Frequency (GHz) 3.1-3.5
Pout (dBm) 57.6
Power Gain (dB) 11.6
Efficiency (%) 58
VDS (V) 50
IDS(DC) (A) 1.5
Rth (°C/W) 0.55
Condition Pulse width: 200µsec, Duty 10%
Note Tc(op)=+25°C

Package Information

IV Package
IV
IV

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