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Product Information



Part Number FLL200IB-1
Class Power GaAs > High Power GaAs FETs
Outline / Package Code IB
Function L-Band Medium & High Power GaAs FET
Description The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 660KB)

Frequency Band L
Series FLL
P1dB Typ. (dBm) 42.5
G1db.Typ (dB) 13
η add Typ.(%) 35
Fequency f (GHz) 1.5
VDS Typ.(V) 10
lDS(DC)Typ.(mA) 4800
Rth Typ.(°C/W) 1.6
Note Tc(op)=+25°C
Further Information
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ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IB Package

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