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Product Information

Specifications

SGN21C320I2D


Part Number SGN21C320I2D
Class Power GaN > GaN HEMTs for Base Station  > Peak Stage of Doherty Amplifier
Outline / Package Code I2D
Function High Voltage - High Power GaN-HEMT
Features
  • High Voltage Operation: VDS=50V
  • High Power: 55.0dBm (Typ.) @Psat
  • High Efficiency: 65% (Typ.) @Psat
  • Liner Gain: 18.5dB (Typ.) @f=2.14GHz
  • Proven Reliability
  • Only For peak stage of Doherty amplifier
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain.
This new product is ideally suited for use in 2.1GHz LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 125KB)

Frequency (GHz) 2.14
Psat Typ.(dBm) 55.0
Gp Typ. (dB) 17.5
VDS (V) 50
Rth Typ.(°C/W) 1.2
Note TC(op)=+25°C Psat : 10%-duty RF pulse(DC supply constant) Gp : Pout=3dB backoff point, 10%-duty RF pulse(DC supply constant:IDS(DC)=10mA)
Further Information
Simulation
S-Parameter *Login required
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

I2D Package
I2D
I2D

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