HOME > Electron Devices > Internally Matched High Power GaAs FETs > ELM1314-9F

Product Information

Specifications

ELM1314-9F


Part Number ELM1314-9F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IA
Function Ku-Band Internally Matched FET
Features
  • High Output Power: P1dB=39.5dBm(Typ.)
  • High Gain: G1dB=6.0dB(Typ.)
  • High PAE: ηadd=30%(Typ.)
  • Broad Band: 13.75 to 14.5GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
Description The ELM1314-9F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Datasheet ( PDF 286KB)

Frequency f (GHz) 13.75-14.5
2tone test lM3 Typ. (dBc) -30
2tone test @Pout S.C.L. (dBm) 33
P1dB Typ. (dBm) 39.5
G1db.Typ (dB) 6
η add Typ.(%) 30
VDS Typ.(V) 10
IDS (DC) Typ. (mA) 1750
IDS (RF) Typ. (mA) 2400
Rth Typ.(°C/W) 3.5
Feature/Application •50Ω internally matched •No external matching •Optimized for each frequency band
Note Tc(op)=+25°C
Documents
ApplicationNote Mounting Instructions for Packaged FETs and MMICs
(PDF 124KB)

Package Information

IA Package
IA
IA

Return to the top