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製品情報

Performance

SGC0910-301B-R


Part Number SGC0910-301B-R
Class GaN Product > GaN HEMTs for Radar  > C/X
Outline / Package Code I2K
Function X-Band Internally Matched GaN-HEMT
Features
  • High Output Power: Psat=55.3dBm (Typ.)
  • High Gain: Gp=9.3dB (Typ.)
  • High Power Added Efficiency: PAE=38% (Typ.)
  • Broad Band: 9.0 to 10.0GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package
  • Long pulse operation *
    • *Reduced Vds and/or low case temperature are needed to keep Tch below 200 deg.C. Please contact for the detail.
Description The SGC0910-301B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50Ω system.
Datasheet ( PDF 196KB)

Frequency f (GHz) 9.0-10.0
Pout (dBm) 55.3(-9.6) 54.7(9.6-)
Gp (dB) 9.3(-9.6) 8.7(9.6-)
ηD (%) 38
VDS (V) 50
lDS(DC) (A) 1
lDS(RF) (A) 15.8
Rth (°C/W) 0.7
Conditions Pulse Width: 100µsec, Duty 10%
Note Tc(op)=+25°C

Package Information

I2K Package
I2K
I2K

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