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製品情報

Specifications

SGN26H120M1H


Part Number SGN26H120M1H
Class Power GaN > GaN HEMTs for Base Station  > Final Stage
Outline / Package Code M1H
Function High Voltage - High Power GaN-HEMT
Features
Description Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use from 0.7GHz to 2.7GHz W-CDMA and LTE design requirements as it offers high gain, long term reliability and ease of use.
Datasheet ( PDF 427KB)

Frequency (GHz) 2.65
Psat Typ.(dBm) *1 50.8
Pout (Ave.)Typ.(dBm) 43.0
Gp Typ. (dB) *2 17.0
VDS (V) 50
IDS(DC) (mA) 400
Rth Typ.(°C/W) 1.7
Note *1: 10%-duty RF pulse(DC supply constant)
*2: Pout=(Ave.) , CW modulation Signal (W-CDMA)
TC(op)=+25°C

Package Information

M1H Package
M1H
M1H

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