Part Number | SGN19H240M1H |
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Class | Power GaN > GaN HEMTs for Base Station > Final Stage |
Outline / Package Code | M1H |
Function | High Voltage - High Power GaN-HEMT |
Features |
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Description | Sumitomo Electric's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use from 1.8GHz to 2.0GH W-CDMA and LTE design requirements as it offers high gain, long term reliability and ease of use. |
Datasheet | ( 353KB) |
Frequency (GHz) | 1.88 |
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Psat Typ.(dBm) *1 | 53.8 |
Pout (Ave.)Typ.(dBm) | 46.0 |
Gp Typ. (dB) *2 | 16.5 |
VDS (V) | 50 |
IDS(DC) (mA) | 800 |
Rth Typ.(°C/W) | 1.2 |
Note | *1: 10%-duty RF pulse(DC supply constant) *2: Pout=(Ave.) , CW modulation Signal (W-CDMA) TC(op)=+25°C |