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製品情報

Specifications

FHX35LG


Part Number FHX35LG
Class Low-noise HEMTs > GaAs HEMTs
Outline / Package Code LG
Function Super Low Noise HEMT
Features
  • Low Noise Figure: 1.2B (Typ.)@f=12GHz
  • High Associated Gain: 10.0dB (Typ.)@f=12GHz
  • Lg ≤ 0.25µm, Wg = 280µm
  • Gold Gate Metallization for High Reliability
  • Cost Effective Ceramic Microstrip (SMT) Package
  • Tape and Reel Packaging Available
    Description The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
    Datasheet ( PDF 534KB)

    Noise figure NF Typ. (dB) 1.2
    Associated Gain Gas Typ. (dB) 10
    Drain Voltage VDS (V) 3
    Drain Current lDS (mA) 10
    Frequency f (GHz) 12
    Application Low Noise Amp, Mixer, GPS
    Note Tc(op)=+25°C
    Further Information
    Simulation
    S-Parameter *Login required

    Package Information

    LG Package
    LG
    LG

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