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製品情報

Performance

FLM5053-8F


Part Number FLM5053-8F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IB
Function C-Band Internally Matched FET
Features
  • High Output Power: P1dB = 39.5dBm (Typ.)
  • High Gain: G1dB = 9.5dB (Typ.)
  • High PAE: hadd = 36% (Typ.)
  • Low IM3 = -46dBc@Po = 28.5dBm
  • Broad Band: 5.0 to 5.3GHz
  • Impedance Matched Zin/Zout = 50Ω
Description The FLM5053-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 454KB)

Frequency f (GHz) 5.0-5.3
P1dB (dBm) 39.5
G1db (dB) 9.5
ηadd (%) 36
2tone test lM3 (dBc) -46
2tone test @Pout S.C.L. (dBm) 28.5
VDS (V) 10
IDS(DC) (mA) 2200
IDS(RF) (mA) 2200
Rth (°C/W) 3
Note Tc(op)=+25°C

Package Information

IB Package
IB
IB

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