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製品情報

Performance

FLM1415-6F


Part Number FLM1415-6F
Class Power GaAs > Internally Matched High Power GaAs FETs
Outline / Package Code IA
Function Ku-Band Internally Matched FET
Features
  • High Output Power: P1dB = 37.0dBm (Typ.)
  • High Gain: G1dB = 5.5dB (Typ.)
  • High PAE: ηadd = 20% (Typ.)
  • Low IM3 = -45dBc@Po = 26.0dBm (Typ.)
  • Broad Band: 14.5 to 15.3GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed
Description The FLM1415-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet ( PDF 305KB)

Frequency f (GHz) 14.5-15.3
P1dB (dBm) 37
G1db (dB) 5.5
ηadd (%) 20
2tone test lM3 (dBc) -45
2tone test @Pout S.C.L. (dBm) 26
VDS (V) 10
IDS(DC) (mA) 1800
IDS(RF) (mA) 1800
Rth (°C/W) 4
Note Tc(op)=+25°C
Further Information
Simulation
S-Parameter *Login required

Package Information

IA Package
IA
IA

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