Part Number | FLX257XV |
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Class | Power GaAs > GaAs FETs (Die) |
1dB Compression Power P1dB (dBm) | 33.5 |
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1dB Compression Gain G1dB (dB) | 7.5 |
Frequency f (GHz) | 10.0 |
Power Added Efficiency η add (%) | 31 |
Drain Voltage VDS (V) | 10 |
Drain Current lDS (mA) | 600 |
Application | X-band Amplifier |
Note | Tc(op)=+25°C Via Hole PHS (Plated Heat Shink) |
Simulation | |
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S-Parameter | *Login required |
Documents | |
ApplicationNote |
Quality Assurance for Bare-Die of wireless device ( 518KB) |