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製品情報

Specifications

FHC40LG


Part Number FHC40LG
Class Low-noise HEMTs > GaAs HEMTs
Outline / Package Code LG
Function Super Low Noise HEMT
Features
  • Low Noise Figure: 0.3dB (Typ.)@f=4GHz
  • High Associated Gain: 15.5dB (Typ.)@f=4GHz
  • Lg ≤ 0.15µm, Wg = 280µm
  • Gold Gate Metallization for High Reliability
  • Cost Effective Ceramic Microstrip (SMT) Package
  • Tape and Reel Available
    Description The FH40LG is a Super High Electron Mobility Transistor (SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
    Datasheet ( PDF 360KB)

    Noise figure NF Typ. (dB) 0.3
    Associated Gain Gas Typ. (dB) 15.5
    Drain Voltage VDS (V) 2
    Drain Current lDS (mA) 10
    Frequency f (GHz) 4
    Application Low Noise Amp, TVRO, BTS
    Note Tc(op)=+25°C
    Further Information
    Simulation
    S-Parameter *Login required

    Package Information

    LG Package
    LG
    LG

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