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製品情報

Specifications

FHX35X


Part Number FHX35X
Class Low-noise HEMTs > GaAs HEMTs
Function GaAs FET & HEMT Die
Features
  • Low Noise Figure: 1.2dB (Typ.)@f=12GHz
  • High Associated Gain: 10.0dB (Typ.)@f=12GHz
  • Lg ≤ 0.25µm, Wg = 280µm
  • Gold Gate Metallization for High Reliability
    Description The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.
    Datasheet ( PDF 380KB)

    Noise figure NF Typ. (dB) 1.2
    Associated Gain Gas Typ. (dB) 10
    Drain Voltage VDS (V) 2
    Drain Current lDS (mA) 10
    Frequency f (GHz) 12
    Application Low Noise Amp
    Note Tc(op)=+25°C Conventional Chip
    Further Information
    Simulation
    S-Parameter *Login required
    Documents
    ApplicationNote Quality Assurance for Bare-Die of wireless device
    (PDF 518KB)

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