Part Number | SGN31E030MK |
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Class | Power GaN > GaN HEMTs for Radar > Driver Stage |
Outline / Package Code | MK |
Function | High Voltage - High Power GaN-HEMT Driver for Radar |
Features |
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Description | Sumitomo Electric's GaN-HEMT SGN31E030MK offers high efficiency, ease of matching, greater consistency and broad bandwidth for S-band radar applications with 50V operation. The device is suitable for the driver stage of S-band High Power Radar device series. |
Datasheet | ( 289KB) |
Frequency (GHz) | 3.1 |
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P3dB Min. (dBm) | 46 |
GL. Min. (dB) | 15 |
ηadd @P3dB Typ.(%) | 40 |
VDS (V) | 50 |
IDS(DC) (mA) | 200 |
Rth Typ. (°C/W) | 2 |
Condition | CW |
Note | Tc(op)=+25°C |
Simulation | |
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S-Parameter | *Login required |
Documents | |
ApplicationNote |
Mounting Instructions for Packaged FETs and MMICs ( 124KB) |