Part Number | FLK207XV |
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Class | Power GaAs > GaAs FETs (Die) |
Function | GaAs FET & HEMT Die |
Features |
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Description | The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance |
Datasheet | ( 338KB) |
1dB Compression Power P1dB (dBm) | 32.5 |
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1dB Compression Gain G1dB (dB) | 6 |
Frequency f (GHz) | 14.5 |
Power Added Efficiency η add (%) | 27 |
Drain Voltage VDS (V) | 10 |
Drain Current lDS (mA) | 480 |
Application | Ku-band Amplifier |
Note | Tc(op)=+25°C Via Hole PHS (Plated Heat Shink) |
Simulation | |
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S-Parameter | *Login required |
Documents | |
ApplicationNote |
Quality Assurance for Bare-Die of wireless device ( 518KB) |