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GaAs HEMTs (High Electron Mobility Transistors)

The HEMT series of products was developed by SEDI for a wide range of general purpose applications including, but not limited, to DBS converters, Handsets, Base Station, Radio-Telescope and many other applications where low-noise and gain is required. SEDI has a full line-up of HEMT products specified for applications in the 4GHz to 12GHz frequency range.

  • LG Package
  • LP Package

Naming Rules

Specifications

Part Number Noise figure
NF Typ.
(dB)
Associated Gain
Gas Typ.
(dB)
Drain Voltage
VDS
(V)
Drain Current
lDS
(mA)
Frequency
f
(GHz)
Outline/
Package
Code
Application
FHC40LG 0.3 15.5 2 10 4 LG CS Front-end, TVRO, Handyphone BTS
FHC30LG 0.35 14.5 2 10 4 LG
FHX76LP 0.4 13.5 2 10 12 LP BS/CS LNA
FHX13LG 0.45 13.0 2 10 12 LG
FHX14LG 0.55 13.0 2 10 12 LG
FHX04LG 0.75 10.5 2 10 12 LG
FHX05LG 0.9 10.5 2 10 12 LG
FHX06LG 1.1 10.5 2 10 12 LG
FHX35LG 1.2 10.0 3 10 12 LG Low Noise Amp, Mixer, GPS
FHX35LP 1.2 10.0 3 10 12 LP
Part Number Noise figure
NF Typ.
(dB)
Associated Gain
Gas Typ.
(dB)
Drain Voltage
VDS
(V)
Drain Current
lDS
(mA)
Frequency
f
(GHz)
Application
FHX13X 0.45 13 2 10 12 Low Noise Amp, DBS LNB
FHX14X 0.55 13 2 10 12
FHX04X 0.75 10.5 2 10 12
FHX05X 0.9 10.5 2 10 12
FHX06X 1.1 10.5 2 10 12
FHX45X 0.55 12 2 10 12
FHX35X 1.2 10 2 10 12

X: Conventional Chip

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