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Application: Base Station

Power GaN

GaN HEMTs for Base Station (Driver Stage)
Part Numner Freq. (GHz) Psat (dBm) Pout (dBm) Gp (dB) ηd (%) VDS (V) IDS(DC) (mA) Rth (°C/W)
EGN21C020MK 2.14 43.5 30 19 12.5 50 100 6.0
EGN21C030MK 2.14 45.0 31.5 19 12.5 50 150 5.0
EGN26C020MK 2.6 43.5 30 18 12.5 50 100 6.0
EGN26C030MK 2.6 45.0 31.5 18 12.5 50 150 5.0
EGN35C030MK 3.5 45.0 31.5 16.5 11 50 150 5.0
Note: Tc (op)=+25°C
GaN HEMTs for Base Station (Final Stage)
Part Numner Freq. (GHz) Psat (dBm) Pout (dBm) Gp (dB) ηd (%) VDS (V) IDS(DC) (mA) Rth (°C/W)
EGN16C105MK 1.6 50.5 42.5 19.0 33 50 400 2.0
EGN21C070MK 2.14 49.5 41.5 17.0 33 50 300 2.5
EGN21C105I2D 2.14 50.3 42.0 18.0 32 50 400 2.0
EGN21C160I2D 2.14 52.5 44.5 18.0 32 50 600 1.4
EGN21C210I2D 2.14 53.0 45.0 18.0 32 50 750 1.1
EGN21C320IV 2.14 55.0 47.0 18.0 31 50 1100 0.8
EGN26C070I2D 2.6 48.8 40.8 18.0 35 50 300 2.5
EGN26C070MK 2.6 48.8 40.8 16.5 30 50 300 2.5
EGN26C105I2D 2.6 50.3 42.0 17.0 32 50 400 2.0
EGN26C160I2D 2.6 52.5 44.5 16.0 30 50 600 1.4
EGN26C210I2D 2.6 53.0 45.0 16.0 30 50 750 1.1
EGN35C070I2D 3.5 48.8 40.8 15.5 28 50 300 2.5
EGNC105MK 0.9 51.0 43.0 20.0 35 50 400 2.0
EGNC160MK 0.9 52.5 44.5 18.0 35 50 600 1.4
EGNC210MK 0.9 53.5 45.5 17.5 35 50 750 1.1
SGN19C160I2D 1.96 52.3 44.5 18.0 35 50 600 1.4
SGN19C210I2D 1.9 53.0 45.0 18.5 32 50 750 1.1
SGN21C050MK 2.14 47.0 39.0 18.5 33 50 200 3.0
SGN21C105MK 2.1 50.3 42.5 17.0 32 50 400 2.0
SGN26C050MK 2.6 47.0 39.0 17.5 33 50 200 3.0
SGN27C160I2D 2.65 52.5 44.5 16.3 30 50 600 1.4
SGN27C210I2D 2.65 53.0 45.0 16.3 30 50 750 1.1
Note: Tc (op)=+25°C
GaN HEMTs for Base Station (Peak Stage of Doherty Amplifier)
Part Numner Freq. (GHz) Psat (dBm) Gp (dB) VDS (V) Rth (°C/W) Package
SGN19C320I2D 1.9 55.0 18 50 1.2 I2D
SGN21C320I2D 2.14 55.0 17.5 50 1.2 I2D
SGN26C320I2D 2.6 55.0 16 50 1.2 I2D
SGNC320MK 0.9 55.0 16.5 50 1.2 MK
Note: Tc (op)=+25°C
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