Application: Base Station
Power GaN
GaN HEMTs for Base Station (Driver Stage)
| Part Numner | Freq. (GHz) | Psat (dBm) | Pout (dBm) | Gp (dB) | ηd (%) | VDS (V) | IDS(DC) (mA) | Rth (°C/W) |
|---|---|---|---|---|---|---|---|---|
| EGN21C020MK | 2.14 | 43.5 | 30 | 19 | 12.5 | 50 | 100 | 6.0 |
| EGN21C030MK | 2.14 | 45.0 | 31.5 | 19 | 12.5 | 50 | 150 | 5.0 |
| EGN26C020MK | 2.6 | 43.5 | 30 | 18 | 12.5 | 50 | 100 | 6.0 |
| EGN26C030MK | 2.6 | 45.0 | 31.5 | 18 | 12.5 | 50 | 150 | 5.0 |
| EGN35C030MK | 3.5 | 45.0 | 31.5 | 16.5 | 11 | 50 | 150 | 5.0 |
GaN HEMTs for Base Station (Final Stage)
| Part Numner | Freq. (GHz) | Psat (dBm) | Pout (dBm) | Gp (dB) | ηd (%) | VDS (V) | IDS(DC) (mA) | Rth (°C/W) |
|---|---|---|---|---|---|---|---|---|
| EGN16C105MK | 1.6 | 50.5 | 42.5 | 19.0 | 33 | 50 | 400 | 2.0 |
| EGN21C070MK | 2.14 | 49.5 | 41.5 | 17.0 | 33 | 50 | 300 | 2.5 |
| EGN21C105I2D | 2.14 | 50.3 | 42.0 | 18.0 | 32 | 50 | 400 | 2.0 |
| EGN21C160I2D | 2.14 | 52.5 | 44.5 | 18.0 | 32 | 50 | 600 | 1.4 |
| EGN21C210I2D | 2.14 | 53.0 | 45.0 | 18.0 | 32 | 50 | 750 | 1.1 |
| EGN21C320IV | 2.14 | 55.0 | 47.0 | 18.0 | 31 | 50 | 1100 | 0.8 |
| EGN26C070I2D | 2.6 | 48.8 | 40.8 | 18.0 | 35 | 50 | 300 | 2.5 |
| EGN26C070MK | 2.6 | 48.8 | 40.8 | 16.5 | 30 | 50 | 300 | 2.5 |
| EGN26C105I2D | 2.6 | 50.3 | 42.0 | 17.0 | 32 | 50 | 400 | 2.0 |
| EGN26C160I2D | 2.6 | 52.5 | 44.5 | 16.0 | 30 | 50 | 600 | 1.4 |
| EGN26C210I2D | 2.6 | 53.0 | 45.0 | 16.0 | 30 | 50 | 750 | 1.1 |
| EGN35C070I2D | 3.5 | 48.8 | 40.8 | 15.5 | 28 | 50 | 300 | 2.5 |
| EGNC105MK | 0.9 | 51.0 | 43.0 | 20.0 | 35 | 50 | 400 | 2.0 |
| EGNC160MK | 0.9 | 52.5 | 44.5 | 18.0 | 35 | 50 | 600 | 1.4 |
| EGNC210MK | 0.9 | 53.5 | 45.5 | 17.5 | 35 | 50 | 750 | 1.1 |
| SGN19C160I2D | 1.96 | 52.3 | 44.5 | 18.0 | 35 | 50 | 600 | 1.4 |
| SGN19C210I2D | 1.9 | 53.0 | 45.0 | 18.5 | 32 | 50 | 750 | 1.1 |
| SGN21C050MK | 2.14 | 47.0 | 39.0 | 18.5 | 33 | 50 | 200 | 3.0 |
| SGN21C105MK | 2.1 | 50.3 | 42.5 | 17.0 | 32 | 50 | 400 | 2.0 |
| SGN26C050MK | 2.6 | 47.0 | 39.0 | 17.5 | 33 | 50 | 200 | 3.0 |
| SGN27C160I2D | 2.65 | 52.5 | 44.5 | 16.3 | 30 | 50 | 600 | 1.4 |
| SGN27C210I2D | 2.65 | 53.0 | 45.0 | 16.3 | 30 | 50 | 750 | 1.1 |
GaN HEMTs for Base Station (Peak Stage of Doherty Amplifier)
| Part Numner | Freq. (GHz) | Psat (dBm) | Gp (dB) | VDS (V) | Rth (°C/W) | Package |
|---|---|---|---|---|---|---|
| SGN19C320I2D | 1.9 | 55.0 | 18 | 50 | 1.2 | I2D |
| SGN21C320I2D | 2.14 | 55.0 | 17.5 | 50 | 1.2 | I2D |
| SGN26C320I2D | 2.6 | 55.0 | 16 | 50 | 1.2 | I2D |
| SGNC320MK | 0.9 | 55.0 | 16.5 | 50 | 1.2 | MK |