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Features
- High Channel Temperature (Tch): Up to 250°C
- Higher Impedance: ~20Ω (Easy to Match)
- High Operating Voltage: 50V
- High Breakdown Voltage: 250V
- High Power: Up to 320W
- High Efficiency: 70% @P3dB, C series
- High Efficiency: >32% @LTE Pout (Ave) see BTS(Final stage)
- High Gain: 18dB @2.1GHz, C series
- Excellent suitability with Digital Pre-Distortion System
EGNB010MK
EGN21C105I2D
EGN21B180IV
For General Purpose
| Part Number | Freq. (GHz) |
P3dB Typ. (dBm) |
GL Typ. (dB) |
η@P3dB Typ. (%) |
lDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|
| EGNB010MK | 3.5 | 41.0 | 13.0 | 60 | 100 | 4.5 | MK |
| EGNB030MK | 2.7 | 46.5 | 13.0 | 60 | 200 | 2.0 | |
| EGNB045MK | 2.2 | 47.5 | 13.0 | 60 | 250 | 1.4 | |
| EGNB070MK | 0.9 | 49.5 | 18.0 | 70 | 400 | 1.5 | |
| EGNB090MK | 0.9 | 51.0 | 18.0 | 70 | 500 | 1.2 | |
| EGNB060M1A* | 2.7 | 49.0 | 12.0 | 55 | 400 | 1.1 | M1A |
| EGNB090M1A* | 2.2 | 50.0 | 11.5 | 55 | 500 | 0.75 | |
| EGNB180M1A* | 0.9 | 53.5 | 17.5 | 65 | 1000 | 0.65 |
* Under development, Sample Available
For BTS (Final Stage)
| Part Number | Application | Freq. (GHz) |
Psat*1 Typ. (dBm) |
Pout (Ave.) Typ. (dBm) |
Gp Typ. (dB) |
η@Pout (Ave.) Typ. (%) |
IDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|---|---|
| EGN21B090IV | 2.1G LTE | 2.14 | 50.0 | 42.0*2 | 16.0*2 | 33*2 | 500 | 1.2 | IV |
| EGN21B180IV | 2.1G LTE | 2.14 | 53.0 | 45.0*2 | 16.0*2 | 32*2 | 1000 | 0.6 | |
| EGNC105MK | 0.9G LTE | 0.9 | 51.0 | 43.0*3 | 20.0*3 | 35*3 | 400 | 2.0 | MK |
| EGNC160MK | 0.9G LTE | 0.9 | 52.5 | 44.5*3 | 18.0*3 | 35*3 | 600 | 1.4 | |
| EGNC210MK | 0.9G LTE | 0.9 | 53.5 | 45.5*3 | 17.5*3 | 35*3 | 750 | 1.1 | |
| EGN16C105MK | 1.6G LTE | 1.6 | 50.5 | 42.5*3 | 19.0*3 | 33*3 | 400 | 2.0 | |
| EGN21C070MK | 2.1G LTE | 2.14 | 49.5 | 41.5*3 | 17.0*3 | 33*3 | 300 | 2.5 | |
| EGN21C105I2D | 2.1G LTE | 2.14 | 50.3 | 42.0*2 | 18.0*2 | 32*2 | 400 | 2.0 | I2D |
| EGN21C210I2D | 2.1G LTE | 2.14 | 53.0 | 45.0*2 | 18.0*2 | 32*2 | 750 | 1.1 | |
| EGN21C320IV | 2.1G LTE | 2.14 | 55.0 | 47.0*2 | 18.0*2 | 31*2 | 1100 | 0.75 | IV |
| EGN26C070I2D | 2.6G WiMAX | 2.6 | 48.8 | 40.8*3 | 18.0*3 | 35*3 | 300 | 2.5 | I2D |
- *1 : 10%-duty RF pulse (DC supply constant)
- *2 : Pout=(Ave.), f0=2.135GHz, f1=2.145GHz, W-CDMA(3GPP3.4 12-00) BS-1 64ch 47.5% clipping modulation (PAR=8.5dB@0.01%)
- *3 : Pout=(Ave.), W-CDMA(3GPP3.4 12-00) BS-1 64ch 85% clipping modulation (PAR=8.5dB@0.01%)
For BTS (Driver Stage)
| Part Number | Freq. (GHz) |
Psat*1 Typ. (dBm) |
Pout*2 (Ave.) Typ. (dBm) |
Gp*2 Typ. (dB) |
η*2@Pout (Ave.) Typ. (%) |
IDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|---|
| EGN21C020MK | 2.14 | 43.5 | 30.0 | 19.0 | 12.5 | 100 | 6.0 | MK |
| EGN21C030MK | 2.14 | 45.0 | 31.5 | 19.0 | 12.5 | 150 | 5.0 | |
| EGN26C020MK | 2.6 | 43.5 | 30.0 | 18.0 | 12.5 | 100 | 6.0 | |
| EGN26C030MK | 2.6 | 45.0 | 31.5 | 18.0 | 12.5 | 150 | 5.0 |
- *1 : 10%-duty RF pulse (DC supply constant)
- *2 : Pout=(Ave.), CW
Note) Tc(op)=+25°C
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| (C) 2007 Sumitomo Electric Industries, Ltd. |
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