住友電工デバイス・イノベーション株式会社

Home
サイトマップ
製品情報 新製品 光データリンク 光デバイス ワイヤレス 会社概要

Gan HEMTs(High Electron Mobility Transistors)

  • Home>
  • 新製品>
  • GaN HEMTs(High Electron Mobility Transistors) for Radar

For Radar

Features

  • Designed for L-band / S-band Radar Applications
  • Higher Impedance for Ease of Use
  • Broadband Operation: 200MHz for L-band, 400MHz for S-band
  • High Operating Voltage: 50V
  • High Power: Up to 320W
  • High Efficiency: 50%
  • High Gain
  • Low Thermal Resistance (Rth)

GaN HEMTs for Radar

  • MK Package
  • IV Package

Specifications

Part Number Freq.
(GHz)
Pout
min.
(W)
Power Gain
min.
(dB)
Efficiency
Typ.
(%)
VDS
(V)
lDS(DC)
(mA)
Outline/
Package
Code
EGN13B200IV-R 1.2-1.4 170 16.3 55 50 1000 IV
EGN28B100IV-R 2.7-2.9 120 12.8 56 50 500
EGN28B200IV-R 2.7-2.9 230 12.6 53 50 1000
EGN29B100IV-R 2.7-3.1 100 12 56 50 500
EGN29B200IV-R 2.7-3.1 200 11 53 50 1000
EGN31B100IV-R* 2.9-3.3 120 11.8 55 50 500
EGN31B200IV-R* 2.9-3.3 200 11 50 50 1000
SGN2935-300D-R* 2.9-3.5 300 12.8 48 50 1500
SGN2933-320D-R* 2.9-3.3 320 13 50 50 1500
EGN33B100IV-R* 3.1-3.5 100 11 50 50 500
  • * Under development, Sample Available

Specifications (Driver Stage)

Part Number Freq.
(GHz)
P3dB
min.
(dBm)
GL
min.
(dB)
η@P3dB
Typ.
(%)
VDS
(V)
lDS(DC)
(mA)
Outline/
Package
Code
EGNB010MK 3.5 40 12 60 50 100 MK
EGNB030MK 2.7 46.5 13 60 50 200
EGN31B030MK 3.1 45.5 12 45 50 200
EGNB090MK 0.9 51 18 70 50 500
(C) 2007 Sumitomo Electric Industries, Ltd.
サイトのご利用にあたって 個人情報保護方針