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Gan HEMTs(High Electron Mobility Transistors)

For General Purpose

Features

  • Higher Load Impedance: (Easy Match, Wide Band)
  • High Operating Voltage: 50V
  • Higher Gain: GL=16dB @f= 2.7GHz, 30W Device (E series)
  • High Power: Up to 180W P3dB (B series)
  • High Efficiency
  • Low Thermal Resistance (Rth)

GaN HEMTs for General Purpose (B series)

  • MK Package
  • M1A Package

Specifications

Part Number Freq.
(GHz)
P3dB
Typ.
(dBm)
GL
Typ.
(dB)
η@P3dB
Typ.
(%)
lDS(DC)
(mA)
Rth
Typ.
(°C/W)
Outline/
Package
Code
SGNE010MK 3.5 40.5 16.0 55 100 4.5 MK
SGNE030MK 2.7 46.5 16.0 55 200 2.0
SGNE045MK 2.2 47.5 16.0 55 250 1.4
SGNE070MK 0.9 49.5 21.0 70 400 1.5
SGNE090MK 0.9 51.0 20.0 70 500 1.2
  • Note: Tc (op)=+25°C

Specifications

Part Number Freq.
(GHz)
P3dB
Typ.
(dBm)
GL
Typ.
(dB)
η@P3dB
Typ.
(%)
lDS(DC)
(mA)
Rth
Typ.
(°C/W)
Outline/
Package
Code
EGNB010MK 3.5 41.0 13.0 60 100 4.5 MK
EGNB030MK 2.7 46.5 13.0 60 200 2.0
EGNB045MK 2.2 47.5 13.0 60 250 1.4
EGNB070MK 0.9 49.5 18.0 70 400 1.5
EGNB090MK 0.9 51.0 18.0 70 500 1.2
EGNB060M1A 2.7 49.0 12.0 55 400 1.1 M1A
EGNB090M1A 2.2 50.5 12.0 55 500 0.75
EGNB180M1A 0.9 53.5 17.5 65 1000 0.65
  • Note: Tc (op)=+25°C
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