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C to K Band MMICs

WLCSP MMICs for Micro/Millimeter-wave Applications

SEI/SEDI proposes the WLCSP (Wafer Level Chip Scale Package) technology for the solution of the next generation device.

This technology achieved a very excellent frequency performance by uniting with 3- D MMIC technology, and can apply from C to E-band applications.

The WLCSP chip is the flip chip form with the solder ball and it is mountable in the SMT production line.

It is unnecessary the wire bonding, it can achieve high mass productivity up to high frequency range.

Features

  • Low Cost Surface Mount Type Device
  • Flip Chip Form with Solder Ball
    Solder Ball Diameter: 165 mm
    Solder Ball Pitch: 400mm
  • Applicable from C to E-Band application.
  • Small Size
  • Highly Integrated
  • Chip Level Protection against Humidity
  • RoHS Compliance
  • Outline of WLCSP MMIC
  • SMM5139XZ

♦ Process

Product Lineup

13/15GHz 18/23GHz 24/30GHz
Low Noise Amp SMM5722XZ SMM5723XZ* SMM5724XZ*
Down Converter SMM5139XZ SMM5142XZ* SMM5144XZ*
Up Converter SMM5138XZ SMM5141XZ* SMM5143XZ*

SMT-Series MMIC: Power Amplifier MMICs for Radio Link and VSAT

Features

  • SMT (Surface Mount Type) Package
  • High Output Power: Up to 2W
  • Impedence Matched Zin/Zout = 50Ω
  • Suitable for Radio Link and VSAT
  • V1D Package

Specifications

Ta=+25°C

Part Number Frequency
Range
f(GHz)
Output Power
at 1dB G.C.P.
P1dB
dBm (Typ.)
Gain
at 1dB G.C.P.
G1dB
dB (Typ.)
3rd. Order
Intercept Point
OIP3
dBm (Typ.)
Drain-Source
Voltage
VDD
(V)
Drain Current
at 1dB G.C.P.
lDD
mA (Typ.)
Outline/
Package
Code
SMM5085V1B 12.7-15.4 32.5 24 42 6 1500 V1B
EMM5081V1B 13.75-14.5 33.5 29 39.5 6 1400
EMM5836V1B/001 17.7-19.7 32.5 22 40 6 1800
SMM5845V1B 21.2-23.6 33 21 41 6 1800
SMM5846V1D 27.5-29.5 31 19 39 6 1450 V1D
EMM5841V1B 29.5-30.0 30 14 - 6 850 V1B

G.C.P. : Gain Compression Point

(C) 2007 Sumitomo Electric Industries, Ltd.
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