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- GaAs HEMTs (High Electron Mobility Transistors)
The HEMT series of products was developed by SEDI. for a wide range of general purpose applications including, but not limited, to DBS converters, Handsets, Base Station, Radio-Telescope and many other applications where low-noise and gain is required. SEDI has a full line-up of HEMT products specified for applications in the 4GHz to 12GHz frequency range.
LG Package
LP Package
Specifications
| Part Number | Noise figure NF Typ. (dB) |
Associated Gain Gas Typ. (dB) |
Drain Voltage VDS (V) |
Drain Current lDS (mA) |
Frequency f (GHz) |
Outline/ Package Code |
Application |
|---|---|---|---|---|---|---|---|
| FHC40LG | 0.3 | 15.5 | 2 | 10 | 4 | LG | CS Front-end, TVRO, Handyphone BTS |
| FHC30LG | 0.35 | 14.5 | 2 | 10 | 4 | LG | |
| FHX76LP | 0.4 | 13.5 | 2 | 10 | 12 | LP | BS/CS LNA |
| FHX13LG | 0.45 | 13.0 | 2 | 10 | 12 | LG | |
| FHX14LG | 0.55 | 13.0 | 2 | 10 | 12 | LG | |
| FHX04LG | 0.75 | 10.5 | 2 | 10 | 12 | LG | |
| FHX05LG | 0.9 | 10.5 | 2 | 10 | 12 | LG | |
| FHX06LG | 1.1 | 10.5 | 2 | 10 | 12 | LG | |
| FHX35LG | 1.2 | 10.0 | 3 | 10 | 12 | LG | Low Noise Amp, Mixer, GPS |
| FHX35LP | 1.2 | 10.0 | 3 | 10 | 12 | LP |
| Part Number | Noise figure NF Typ. (dB) |
Associated Gain Gas Typ. (dB) |
Drain Voltage VDS (V) |
Drain Current lDS (mA) |
Frequency f (GHz) |
Application |
|---|---|---|---|---|---|---|
| FHX13X | 0.45 | 13 | 2 | 10 | 12 | Low Noise Amp, DBS LNB |
| FHX14X | 0.55 | 13 | 2 | 10 | 12 | |
| FHX04X | 0.75 | 10.5 | 2 | 10 | 12 | |
| FHX05X | 0.9 | 10.5 | 2 | 10 | 12 | |
| FHX06X | 1.1 | 10.5 | 2 | 10 | 12 | |
| FHX45X | 0.55 | 12 | 2 | 10 | 12 | |
| FHX35X | 1.2 | 10 | 2 | 10 | 12 |
X: Conventional Chip
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