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- GaN HEMTs(High Electron Mobility Transistors) for BTS
For Base Station (C Series)
Features
- Designed for 3G/LTE/WiMAX Base Station
- Optimized for Doherty Architecture
- Higher Load Impedance: 15 to 20Ω @Final Stage (Easy Match, Wide Band)
- High Operating Voltage: 50V
- High Power: Up to 320W Psat Single Ended
- High Gain: Gp=16dB @f=2.6GHz, 210W Device
- High Efficiency: 60-70% with Internal Class F Matching
MK Package
I2D Package
IV Package
Specifications (Final Stage)
| Part Number | Freq. (GHz) |
Psat*1 Typ. (dBm) |
Pout (Ave.) Typ. (dBm) |
Gp Typ. (dB) |
η@Pout (Ave.) Typ. (%) |
IDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|---|
| EGNC105MK | 0.9 | 51.0 | 43.0*3 | 20.0*3 | 35*3 | 400 | 2.0 | MK |
| EGNC160MK | 0.9 | 52.5 | 44.5*3 | 18.0*3 | 35*3 | 600 | 1.4 | |
| EGNC210MK | 0.9 | 53.5 | 45.5*3 | 17.5*3 | 35*3 | 750 | 1.1 | |
| EGN16C105MK | 1.6 | 50.5 | 42.5*3 | 19.0*3 | 33*3 | 400 | 2.0 | |
| EGN21C070MK | 2.14 | 49.5 | 41.5*3 | 17.0*3 | 33*3 | 300 | 2.5 | |
| EGN21C105I2D | 2.14 | 50.3 | 42.0*2 | 18.0*2 | 32*2 | 400 | 2.0 | I2D |
| EGN21C160I2D | 2.14 | 52.5 | 44.5*2 | 18.0*2 | 32*2 | 600 | 1.4 | |
| EGN21C210I2D | 2.14 | 53.0 | 45.0*2 | 18.0*2 | 32*2 | 750 | 1.1 | |
| EGN21C320IV | 2.14 | 55.0 | 47.0*2 | 18.0*2 | 31*2 | 1100 | 0.8 | IV |
| EGN26C070MK | 2.6 | 48.8 | 40.8*3 | 16.5*2 | 30*2 | 300 | 2.5 | MK |
| EGN26C070I2D | 2.6 | 48.8 | 40.8*3 | 18.0*3 | 35*3 | 300 | 2.5 | I2D |
| EGN26C105I2D | 2.6 | 50.3 | 42.0*3 | 17.0*3 | 32*3 | 400 | 2.0 | |
| EGN26C160I2D | 2.6 | 52.5 | 44.5*3 | 16.0*3 | 30*3 | 600 | 1.4 | |
| EGN26C210I2D | 2.6 | 53.0 | 45.0*3 | 16.0*3 | 30*3 | 750 | 1.1 | |
| SGN27C160I2D | 2.65 | 52.5 | 44.5*3 | 16.3*3 | 30*3 | 600 | 1.4 | |
| SGN27C210I2D | 2.65 | 53.0 | 45.0*3 | 16.3*3 | 30*3 | 750 | 1.1 | |
| EGN35C070I2D | 3.5 | 48.8 | 40.8*3 | 15.5*3 | 28*3 | 300 | 2.5 |
- *1: 10%-duty RF pulse
- *2: Pout=(Ave.), f0=2.135GHz, f1=2.145GHz, W-CDMA (3GPP3.4 12-00) BS-1 64ch 47.5% clipping modulation (PAR=8.5dB@0.01%)
- *3: Pout=(Ave.), W-CDMA (3GPP3.4 12-00) BS-1 64ch 85% clipping modulation (PAR=8.5dB@0.01%)
- Note: Tc (op)=+25°C
Specifications (Driver Stage)
| Part Number | Freq. (GHz) |
Psat*1 Typ. (dBm) |
Pout*2 (Ave.) Typ. (dBm) |
Gp*2 Typ. (dB) |
η*2@Pout (Ave.) Typ. (%) |
IDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|---|
| EGN21C020MK | 2.14 | 43.5 | 30.0 | 19.0 | 12.5 | 100 | 6.0 | MK |
| EGN21C030MK | 2.14 | 45.0 | 31.5 | 19.0 | 12.5 | 150 | 5.0 | |
| EGN26C020MK | 2.6 | 43.5 | 30.0 | 18.0 | 12.5 | 100 | 6.0 | |
| EGN26C030MK | 2.6 | 45.0 | 31.5 | 18.0 | 12.5 | 150 | 5.0 | |
| EGN35C030MK | 3.5 | 45.0 | 31.5 | 16.5 | 11.0 | 150 | 5.0 |
- *1: 10%-duty RF pulse
- *2 : Pout=(Ave.), CW
- Note: Tc (op)=+25°C
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| (C) 2007 Sumitomo Electric Industries, Ltd. |
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