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Gan HEMTs(High Electron Mobility Transistors)

"B" Series

Features

  • High Channel Temperature (Tch): Up to 250 °C
  • Higher Load Impedance: 5 Ω to 20 Ω (Easy Match, Wide band)
  • High Operating Voltage: 50 V
  • High Breakdown Voltage: 350 V
  • High Power: Up to 180 W P1dB
  • High Efficiency: 60 % @Psat
  • Low thermal Resistance (Rth)

Naming Rules

  • MK Package
  • M1A Package
  • IV Package

For General Purpose

Part Number Freq.
(GHz)		 P3dB
Typ.
(dBm)		 GL
Typ.
(dB)		 η@P3dB
Typ.
(%)		 lDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGNB010MK 3.5 41.0 13.0 60 100 4.5 MK
EGNB030MK 2.7 46.5 13.0 60 200 2.0
EGNB045MK 2.2 47.5 13.0 60 250 1.4
EGNB070MK 0.9 49.5 18.0 70 400 1.5
EGNB090MK 0.9 51.0 18.0 70 500 1.2
EGNB060M1A 2.7 49.0 12.0 55 400 1.1 M1A
EGNB090M1A 2.2 50.5 12.0 55 500 0.75
EGNB180M1A 0.9 53.5 17.5 65 1000 0.65

Internal Matched @2.14GHz

Note) Tc(op)=+25°C

Part Number Applicatioln Freq.
(GHz)		 Psat*1
Typ.
(dBm)		 Pout
(Ave.)
Typ.
(dBm)		 Gp
Typ.
(dB)		 η@Pout
(Ave.)
Typ.
(%)		 lDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGN21B090IV 2.1G LTE 2.14 50.0 42.0*1 16.0*1 33*1 500 1.2 IV
EGN21B180IV 2.1G LTE 2.14 53.0 45.0*1 16.0*1 32*1 1000 0.6

*1: Pout=(Ave.), f0=2.135GHz, f1=2.145GHz, W-CDMA(3GPP3.4 12-00) BS-1 64ch 47.5% clipping modulation (PAR=8.5dB@0.01%)

"C" Series

Features

  • Designed for 3G / LTE / WiMAX base station
  • Optimized for Doherty Architecture
  • Higher Load Impedance: 15 to 20 Ω @Final stage (Easy Match, Wide band)
  • High Operating Voltage: 50 V
  • High Power: Up to 320 W Psat Single Ended
  • High Gain: Gp=16 dB @f=2.6 GHz, 210 W Device
  • High Efficiency: 60-70 % with Internal Class F matching
  • MK Package
  • I2D Package
  • IV Package

For Base Station (Final Stage)

Note) Tc(op)=+25°C

Part Number Application Freq.
(GHz)		 Psat*1
Typ.
(dBm)		 Pout
(Ave.)
Typ.
(dBm)		 Gp
Typ.
(dB)		 η@Pout
(Ave.)
Typ.
(%)		 IDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGNC105MK 0.9G LTE 0.9 51.0 43.0*3 20.0*3 35*3 400 2.0 MK
EGNC160MK 0.9G LTE 0.9 52.5 44.5*3 18.0*3 35*3 600 1.4
EGNC210MK 0.9G LTE 0.9 53.5 45.5*3 17.5*3 35*3 750 1.1
EGN16C105MK 1.6G LTE 1.6 50.5 42.5*3 19.0*3 33*3 400 2.0
EGN21C070MK 2.1G LTE 2.14 49.5 41.5*3 17.0*3 33*3 300 2.5
EGN21C105I2D 2.1G LTE 2.14 50.3 42.0*2 18.0*2 32*2 400 2.0 I2D
EGN21C160I2D 2.1G LTE 2.14 52.5 44.5*2 18.0*2 32*2 600 1.4
EGN21C210I2D 2.1G LTE 2.14 53.0 45.0*2 18.0*2 32*2 750 1.1
EGN21C320IV 2.1G LTE 2.14 55.0 47.0*2 18.0*2 31*2 1100 0.8 IV
EGN26C070I2D 2.6G WiMAX 2.6 48.8 40.8*3 18.0*3 35*3 300 2.5 I2D
EGN26C105I2D 2.6G LTE 2.6 50.3 42.0*3 17.0*3 32*3 400 2.0
EGN26C160I2D 2.6G LTE 2.6 52.5 44.5*3 16.0*3 30*3 600 1.4
EGN26C210I2D 2.6G LTE 2.6 53.0 45.0*3 16.0*3 30*3 750 1.1
EGN35C070I2D 3.5G WiMAX 3.5 48.8 40.8*3 15.5*3 28*3 300 2.5
  • *1: 10%-duty RF pulse
  • *2: Pout=(Ave.), f0=2.135GHz, f1=2.145GHz, W-CDMA(3GPP3.4 12-00) BS-1 64ch 47.5% clipping modulation (PAR=8.5dB@0.01%)
  • *3: Pout=(Ave.), W-CDMA(3GPP3.4 12-00) BS-1 64ch 85% clipping modulation (PAR=8.5dB@0.01%)

For BTS (Driver Stage)

Part Number Freq.
(GHz)		 Psat*1
Typ.
(dBm)		 Pout*2
(Ave.)
Typ.
(dBm)		 Gp*2
Typ.
(dB)		 η*2@Pout
(Ave.)
Typ.
(%)		 IDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGN21C020MK 2.14 43.5 30.0 19.0 12.5 100 6.0 MK
EGN21C030MK 2.14 45.0 31.5 19.0 12.5 150 5.0
EGN26C020MK 2.6 43.5 30.0 18.0 12.5 100 6.0
EGN26C030MK 2.6 45.0 31.5 18.0 12.5 150 5.0
EGN35C030MK 3.5 45.0 31.5 16.5 11.0 150 5.0
  • *1: 10%-duty RF pulse
  • *2: Pout=(Ave.), CW
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