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- GaN HEMTs(High Electron Mobility Transistors) for Radar
For Radar
Features
- Designed for L-band / S-band Radar Applications
- Higher Impedance for Ease of Use
- Broadband Operation: 200MHz for L-band, 400MHz for S-band
- High Operating Voltage: 50V
- High Power: Up to 320W
- High Efficiency: 50%
- High Gain
- Low Thermal Resistance (Rth)
MK Package
IV Package
Specifications
| Part Number | Freq. (GHz) |
Pout min. (W) |
Power Gain min. (dB) |
Efficiency Typ. (%) |
VDS (V) |
lDS(DC) (mA) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|
| EGN13B200IV-R | 1.2-1.4 | 170 | 16.3 | 55 | 50 | 1000 | IV |
| EGN28B100IV-R | 2.7-2.9 | 120 | 12.8 | 56 | 50 | 500 | |
| EGN28B200IV-R | 2.7-2.9 | 230 | 12.6 | 53 | 50 | 1000 | |
| EGN29B100IV-R | 2.7-3.1 | 100 | 12 | 56 | 50 | 500 | |
| EGN29B200IV-R | 2.7-3.1 | 200 | 11 | 53 | 50 | 1000 | |
| EGN31B100IV-R* | 2.9-3.3 | 120 | 11.8 | 55 | 50 | 500 | |
| EGN31B200IV-R* | 2.9-3.3 | 200 | 11 | 50 | 50 | 1000 | |
| SGN2935-300D-R* | 2.9-3.5 | 300 | 12.8 | 48 | 50 | 1500 | |
| SGN2933-320D-R* | 2.9-3.3 | 320 | 13 | 50 | 50 | 1500 | |
| EGN33B100IV-R* | 3.1-3.5 | 100 | 11 | 50 | 50 | 500 |
- * Under development, Sample Available
Specifications (Driver Stage)
| Part Number | Freq. (GHz) |
P3dB min. (dBm) |
GL min. (dB) |
η@P3dB Typ. (%) |
VDS (V) |
lDS(DC) (mA) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|
| EGNB010MK | 3.5 | 40 | 12 | 60 | 50 | 100 | MK |
| EGNB030MK | 2.7 | 46.5 | 13 | 60 | 50 | 200 | |
| EGN31B030MK | 3.1 | 45.5 | 12 | 45 | 50 | 200 | |
| EGNB090MK | 0.9 | 51 | 18 | 70 | 50 | 500 |
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| (C) 2007 Sumitomo Electric Industries, Ltd. |
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