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- GaN HEMTs(High Electron Mobility Transistors)
For General Purpose
Features
- Higher Load Impedance: (Easy Match, Wide Band)
- High Operating Voltage: 50V
- Higher Gain: GL=16dB @f= 2.7GHz, 30W Device (E series)
- High Power: Up to 180W P3dB (B series)
- High Efficiency
- Low Thermal Resistance (Rth)
MK Package
M1A Package
Specifications
| Part Number | Freq. (GHz) |
P3dB Typ. (dBm) |
GL Typ. (dB) |
η@P3dB Typ. (%) |
lDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|
| SGNE010MK | 3.5 | 40.5 | 16.0 | 55 | 100 | 4.5 | MK |
| SGNE030MK | 2.7 | 46.5 | 16.0 | 55 | 200 | 2.0 | |
| SGNE045MK | 2.2 | 47.5 | 16.0 | 55 | 250 | 1.4 | |
| SGNE070MK | 0.9 | 49.5 | 21.0 | 70 | 400 | 1.5 | |
| SGNE090MK | 0.9 | 51.0 | 20.0 | 70 | 500 | 1.2 |
- Note: Tc (op)=+25°C
Specifications
| Part Number | Freq. (GHz) |
P3dB Typ. (dBm) |
GL Typ. (dB) |
η@P3dB Typ. (%) |
lDS(DC) (mA) |
Rth Typ. (°C/W) |
Outline/ Package Code |
|---|---|---|---|---|---|---|---|
| EGNB010MK | 3.5 | 41.0 | 13.0 | 60 | 100 | 4.5 | MK |
| EGNB030MK | 2.7 | 46.5 | 13.0 | 60 | 200 | 2.0 | |
| EGNB045MK | 2.2 | 47.5 | 13.0 | 60 | 250 | 1.4 | |
| EGNB070MK | 0.9 | 49.5 | 18.0 | 70 | 400 | 1.5 | |
| EGNB090MK | 0.9 | 51.0 | 18.0 | 70 | 500 | 1.2 | |
| EGNB060M1A | 2.7 | 49.0 | 12.0 | 55 | 400 | 1.1 | M1A |
| EGNB090M1A | 2.2 | 50.5 | 12.0 | 55 | 500 | 0.75 | |
| EGNB180M1A | 0.9 | 53.5 | 17.5 | 65 | 1000 | 0.65 |
- Note: Tc (op)=+25°C
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| (C) 2007 Sumitomo Electric Industries, Ltd. |
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